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| Super323TM SOT323 PNP SILICON POWER TM (SWITCHING) TRANSISTOR ISSUE 1 - SEPTEMBER 1998 FEATURES ZUMT717 * * * * * * 500mW POWER DISSIPATION IC CONT 1.5A 3A Peak Pulse Current Excellent HFE Characteristics Up To 3A (pulsed) Extremely Low Saturation Voltage Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Negative boost functions in DC-DC converters * Supply line switching in mobile phones and pagers * Motor drivers in camcorders and mini disk players DEVICE TYPE ZUMT717 COMPLEMENT ZUMT617 PARTMARKING T71 RCE(sat) 150m at 1.25A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb =25C* SYMBOL VCBO VCEO VEBO ICM IC IB Ptot VALUE -12 -12 -5 -3 -1.25 -200 385 500 -55 to +150 UNIT V V V A A mA mW Operating and Storage Temperature Tj:Tstg Range C Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT717 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) -25 -55 -110 -160 -185 -990 -850 300 300 200 125 75 30 490 450 340 250 140 80 220 15 50 135 MHz pF ns ns MIN. -12 -12 -5 -10 -10 -10 -40 -100 -175 -215 -240 TYP. MAX. UNIT V V V nA nA nA mV mV mV mV mV CONDITIONS. IC= -100A IC= -10mA* IE= -100A VCB=-10V VEB=-4V VCES=-10V IC= -0.1A, IB= -10mA* IC= -0.25A, IB=-10 mA* IC= -0.5A, IB=-10 mA* IC= -1A, IB= -50mA* IC= -1.25A, IB= -100mA* IC= -1.25A, IB= -100mA* IC= -1.25A, VCE= 2V* IC= -10mA, VCE=-2V* IC= -0.1A, VCE= -2V* IC= -0.5A, VCE= -2V* IC= -1.25A, VCE=-2V* IC= -2A, VCE= -2V* IC= -3A, VCE= -2V* IC= -50mA, VCE=-10 V f= 100MHz VCB= -10V, f=1MHz VCC= -10V, IC=-1A IB1=IB2=-100mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE -1100 mV -1000 mV Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ZUMT717 TYPICAL CHARACTERISTICS 0.4 +25C 0.4 IC/IB=50 0.3 0.3 VCE(sat) - (V) VCE(sat) - (V) IC/IB=10 IC/IB=50 IC/IB=100 0.2 0.2 -55C +25C +100C +150C 0.1 0.1 0 1m 10m 100m 1 10 0 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 800 VCE=2V 1.0 0.8 IC/IB=50 hFE - Typical Gain 600 +100C VBE(sat) - (V) 0.6 0.4 0.2 -55C +25C +100C +150C 400 +25C 200 -55C 0 1m 10m 100m 1 10 0 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.0 0.8 10 IC - Collector Current (A) VBE(on) - (V) 1 DC 1s 100ms 10ms 1ms 100s 0.6 0.4 0.2 0 -55C +25C +100C +150C 100m 1m 10m 100m 1 10 10m 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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